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Search Results: Records 1-8 displayed on this page of 8
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Oral presentation

Pulse fluence dependence of local electrical conductivities in femtosecond laser modified SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Roles of hydrogen and nitrogen in SiO$$_{2}$$-SiC interfaces of SiC-MOSFETs; An EDMR (electrically detected magnetic resonance) study

Umeda, Takahide*; Kosugi, Ryoji*; Fukuda, Kenji*; Oshima, Takeshi; Morishita, Norio; Ezaki, Kana*; Isoya, Junichi*

no journal, , 

no abstracts in English

Oral presentation

Transient currents observed from drain contact of 6H-SiC MOSFETs induced by single heavy ion

Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Evaluation of electron irradiated semi-insulated 6H-SiC single crystal substrates

Miyazaki, Hisashi*; Morimoto, Jun*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Defects characterization of 6H-SiC p$$^+$$n diode by laplace transform DLTS

Koike, Shumpei*; Iwamoto, Naoya; Onoda, Shinobu; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Ono, Hiroshi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Polarization dependence of local electric conductivities in femtosecond laser modified SiC

Ito, Takuto*; Deki, Manato; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English

Oral presentation

Characterization of defects in SiC diodes using alpha particles

Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Oshima, Takeshi; Kojima, Kazutoshi*; Koizumi, Atsushi*; Uchida, Kazuo*; Nozaki, Shinji*

no journal, , 

no abstracts in English

Oral presentation

Effect of SiO$$_{2}$$/4H-SiC interface passivalon on energy band alignment between SiO$$_{2}$$ and 4H-SiC

Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; et al.

no journal, , 

A balence band off-set of SiO$$_{2}$$/SiC interface, which affects the reliability of SiC-MOS devises, was evaluated by synchrotron radiation photoemission spectroscopy. An SiO$$_{2}$$ film formed by sputtering deposition showed smaller off-set than that of thermal oxide film. Interface defects, originate in carbon impurities, and balence band off-set of thermal SiO$$_{2}$$/SiC interface were decreased by annealing in the high temperature hydrogen gas.

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